80812 tkim/o1003tn (koto)/92098ha (kt)/3307at, ts no.2019-1/7 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 2sb1124/2SD1624 bipolar transistor (?) 50v, (?) 3a, low v ce ( sat ) , ( pnp ) npn single pcp applications ? voltage regulators, relay drivers, lamp drivers, electrical equipment features ? adoption of fbet, mbit processes ? low collector-to-emitter saturation voltage ? fast switching speed ? large current capacity and wide aso speci cations ( ): 2sb1124 absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)60 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)3 a collector current (pulse) i cp (--)6 a continued on next page. package dimensions unit : mm (typ) 7007b-004 ordering number : en2019b product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collecto r 3 : emitter pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2sb1124s-td-e 2sb1124s-td-h 2sb1124t-td-e 2sb1124t-td-h 2SD1624s-td-e 2SD1624s-td-h 2SD1624t-td-e 2SD1624t-td-h bg lot no. dg lot no. 2SD1624 2sb1124 rank rank 2 3 1 2SD1624 2 3 1 2sb1124
2sb1124 / 2SD1624 no.2019-2/7 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c 500 mw when mounted on ceramic substrate (250mm 2 0.8mm) 1.5 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)40v, i e =0a (--)1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)1 a dc current gain h fe 1v ce =(--)2v, i c =(--)100ma 100* 560* h fe 2v ce =(--)2v, i c =(--)3a 35 gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma 150 mhz output capacitance cob v cb =(--)10v, f=1mhz (39)25 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)2a, i b =(--)100ma (--0.35)0.19 (--0.7)0.5 v base-to-emitter saturation voltage v be (sat) v ce =(--)2a, i c =(--)100ma (--)0.94 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)60 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (70)70 ns storage time t stg (450)650 ns fall time t f (35)35 ns * ; the 2sb1124/2SD1624 are classi ed by 100ma h fe as follows : rank r s t u h fe 100 to 200 140 to 280 200 to 400 280 to 560 switching time test circuit ordering information device package shipping memo 2sb1124s-td-e pcp 1,00pcs./reel pb free 2sb1124s-td-h pcp 1,00pcs./reel pb free and halogen free 2sb1124t-td-e pcp 1,00pcs./reel pb free 2sb1124t-td-h pcp 1,00pcs./reel pb free and halogen free 2SD1624s-td-e pcp 1,00pcs./reel pb free 2SD1624s-td-h pcp 1,00pcs./reel pb free and halogen free 2SD1624t-td-e pcp 1,00pcs./reel pb free 2SD1624t-td-h pcp 1,00pcs./reel pb free and halogen free v r r b 25v --5v + + 50 input outpu t 25 100 f 470 f pw=20 s i c =10i b1 = --10i b2 =1a for pnp, the polarity is reversed. i b1 d.c. 1% i b2 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
2sb1124 / 2SD1624 no.2019-3/7 i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a h fe -- i c h fe -- i c i c -- v be i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v dc current gain, h fe dc current gain, h fe i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a --5.0 --3.0 --2.0 --1.0 --4.0 --4.5 --2.5 --1.5 --0.5 --3.5 0 0 --0.4 --0.8 --2.0 --1.6 --1.2 i b =0 itr08907 2sb1124 --5ma --10ma --20ma --50ma --100ma --200ma --2.0 --1.2 --0.8 --0.4 --1.6 --1.8 --1.0 --0.6 --0.2 --1.4 0 0 --4 --8 --20 --16 --12 --2 --6 --18 --14 --10 i b =0 itr08909 2sb1124 --2ma -- 4 m a --6ma --8ma --14ma --12ma --10ma 5.0 3.0 2.0 1.0 4.0 4.5 2.5 1.5 0.5 3.5 0 0 0.4 0.8 2.0 1.6 1.2 i b =0 itr08908 2SD1624 5ma 10ma 20ma 80ma 60ma 40ma 100ma 2.0 1.2 0.8 0.4 1.6 1.8 1.0 0.6 0.2 1.4 0 048 20 16 12 26 18 14 10 i b =0 itr08910 2SD1624 2ma 1ma 3ma 4ma 6ma 5ma 8ma 7ma 0 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 --3.2 --2.8 --2.4 --1.6 --2.0 --1.2 --0.8 --0.4 0 itr08911 ta=75 c 25 c -- 2 5 c 2sb1124 v ce = --2v 0 0.2 0.4 0.6 0.8 1.2 1.0 3.2 2.8 2.4 1.6 2.0 1.2 0.8 0.4 0 itr08912 ta=75 c 25 c --25 c 2SD1624 v ce =2v 2 3 5 7 1000 2 3 5 7 100 23 5 --0.01 23 5 5 --0.1 23 7 7 7 --1.0 itr08913 2sb1124 v ce = --2v ta=75 c 25 c --25 c 2 3 5 7 1000 2 3 5 7 100 23 5 0.01 23 5 5 0.1 23 7 7 7 1.0 itr08914 2SD1624 v ce =2v ta=75 c 25 c - - 25 c collector current, i c -- a collector current, i c -- a
2sb1124 / 2SD1624 no.2019-4/7 f t -- i c collector current, i c -- a gain-bandwidth product, f t -- mhz cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector-to-emitter saturation voltage, v ce (sat) -- mv 23 5 0.1 10 23 5 0.01 23 5 1.0 100 10 2 5 7 1000 7 5 3 2 3 itr08915 2sb1124 2SD1624 1.0 10 7 3 5 10 1.0 2 3 5 2 27 35 100 27 35 itr08916 2 5 7 7 3 2 5 3 --100 --10 --1000 23 57 77 --0.01 23 5 3 5 --0.1 2 --1.0 itr08917 2sb1124 i c / i b =20 75 c 25 c ta= --25 c 2 5 7 7 3 2 5 3 100 10 1000 23 57 77 0.01 23 5 3 5 0.1 2 1.0 itr08918 2SD1624 i c / i b =20 25 c ta=75 c --25 c 2sb1124 / 2SD1624 v ce =10v 2sb1124 2SD1624 2sb1124 / 2SD1624 f=1mhz v be (sat) -- i c v be (sat) -- i c collector current, i c -- a collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v a s o p c -- ta collector-to-emitter voltage, v ce -- v collector current, i c -- a ambient temperature, ta -- c collector dissipation, p c -- w 1.0 0.1 5 10 5 3 3 2 2 5 3 2 1.0 10 257 3 3 100 257 3 57 itr08921 0 1.8 1.6 1.5 1.4 1.2 0.8 1.0 0.6 0.5 0.4 0.2 0 20 40 60 100 120 160 140 80 itr08922 2sb1124 / 2SD1624 5 7 7 3 2 5 3 --1.0 --10 23 57 77 --0.01 23 5 23 5 --0.1 --1.0 itr08919 2sb1124 i c / i b =20 25 c ta=75 c - -25 c 5 7 7 3 2 5 3 1.0 10 23 57 77 0.01 23 5 23 5 0.1 1.0 itr08920 2SD1624 i c / i b =20 25 c 75 c ta= --25 c i cp =6a 100ms 10ms 1ms dc operation 2sb1124 / 2SD1624 ta=25 c single pulse for pnp, minus sign is omitted. mounted on a ceramic board (250mm 2 ? 0.8mm) mounted on a ceramic board (250mm 2 ? 0.8mm) no heat sink for pnp, the minus sign is omitted. for pnp, the minus sign is omitted. i c =3a
2sb1124 / 2SD1624 no.2019-5/7 bag packing speci cation 2sb1124s-td-e, 2sb1124s-td-h, 2sb1124t-td-e, 2sb1124t-td-h, 2SD1624s-td-e, 2SD1624s-td-h, 2SD1624t-td-e, 2SD1624t-td-h
2sb1124 / 2SD1624 no.2019-6/7 outline drawing land pattern example 2sb1124s-td-e, 2sb1124s-td-h, 2sb1124t-td-e, 2sb1124t-td-h, 2SD1624s-td-e, 2SD1624s-td-h, 2SD1624t-td-e, 2SD1624t-td-h mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
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